The Tyndall National Institute invites applications for a postdoctoral position focused on the electro-optical characterisation of InGaP metal-oxide-semiconductor (MOS) structures.
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The successful candidate will contribute to an increased understanding of non-radiative recombination centres in InGaP based microLED structures. To achieve this, they will interact with our team to form and characterise the relevant MOS structures using impedance spectroscopy.
Key responsibilities include taking a management role in the electrical characterisation and modelling of III-V MOS structures, participating in Education and Public Engagement activities, and ensuring all activities are compliant with our Quality Management system and Health and Safety standards.
A PhD in Engineering or Physics is essential for this role, as is experience in device modelling. Desirable criteria include experience in fabrication, on-wafer electrical characterisation, strong leadership skills, and the growth of III-V devices.
We offer a competitive salary scale, commensurate with public sector pay policy. Please attach an up-to-date CV/Resume and a brief motivation letter outlining how you meet the 'Essential Criteria' for this role.
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